Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using hydrogen peroxide.
Identifieur interne : 000147 ( Main/Exploration ); précédent : 000146; suivant : 000148Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using hydrogen peroxide.
Auteurs : RBID : pubmed:24503476Abstract
We have investigated the effect of hydrogen peroxide (H2O2) on negative bias stress (NBS) stability of solution-processed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The instability of solution-processed a-IGZO TFTs under NBS is attributed to intrinsic oxygen vacancy defects (Vo) and organic chemical-induced defects, such as pores, pin holes, and organic residues. In this respect, we added H2O2 into an indium-gallium-zinc oxide solution to reduce the defects without any degradation of electrical performance. The field-effect mobility and sub-threshold slope of the a-IGZO TFTs were improved from 0.37 cm(2) V(-1) s(-1) and 0.86 V/dec to 0.97 cm(2) V(-1) s(-1) and 0.58 V/dec, respectively. Furthermore, the threshold voltage shift under NBS was dramatically decreased from -3.73 to -0.18 V. These results suggest that H2O2 effectively reduces Vo through strong oxidation and minimizes organic chemical-induced defects by eliminating the organic chemicals at lower temperatures compared to a conventional solution process.
DOI: 10.1021/am4054139
PubMed: 24503476
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using hydrogen peroxide.</title><author><name sortKey="Kwon, Jeong Moo" uniqKey="Kwon J">Jeong Moo Kwon</name><affiliation wicri:level="1"><nlm:affiliation>School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749</wicri:regionArea></affiliation></author><author><name sortKey="Jung, Joohye" uniqKey="Jung J">Joohye Jung</name></author><author><name sortKey="Rim, You Seung" uniqKey="Rim Y">You Seung Rim</name></author><author><name sortKey="Kim, Dong Lim" uniqKey="Kim D">Dong Lim Kim</name></author><author><name sortKey="Kim, Hyun Jae" uniqKey="Kim H">Hyun Jae Kim</name></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1021/am4054139</idno><idno type="RBID">pubmed:24503476</idno><idno type="pmid">24503476</idno><idno type="wicri:Area/Main/Corpus">000178</idno><idno type="wicri:Area/Main/Curation">000178</idno><idno type="wicri:Area/Main/Exploration">000147</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have investigated the effect of hydrogen peroxide (H2O2) on negative bias stress (NBS) stability of solution-processed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The instability of solution-processed a-IGZO TFTs under NBS is attributed to intrinsic oxygen vacancy defects (Vo) and organic chemical-induced defects, such as pores, pin holes, and organic residues. In this respect, we added H2O2 into an indium-gallium-zinc oxide solution to reduce the defects without any degradation of electrical performance. The field-effect mobility and sub-threshold slope of the a-IGZO TFTs were improved from 0.37 cm(2) V(-1) s(-1) and 0.86 V/dec to 0.97 cm(2) V(-1) s(-1) and 0.58 V/dec, respectively. Furthermore, the threshold voltage shift under NBS was dramatically decreased from -3.73 to -0.18 V. These results suggest that H2O2 effectively reduces Vo through strong oxidation and minimizes organic chemical-induced defects by eliminating the organic chemicals at lower temperatures compared to a conventional solution process.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24503476</PMID><DateCreated><Year>2014</Year><Month>03</Month><Day>12</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1944-8252</ISSN><JournalIssue CitedMedium="Internet"><Volume>6</Volume><Issue>5</Issue><PubDate><Year>2014</Year><Month>Mar</Month><Day>12</Day></PubDate></JournalIssue><Title>ACS applied materials & interfaces</Title><ISOAbbreviation>ACS Appl Mater Interfaces</ISOAbbreviation></Journal><ArticleTitle>Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using hydrogen peroxide.</ArticleTitle><Pagination><MedlinePgn>3371-7</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/am4054139</ELocationID><Abstract><AbstractText>We have investigated the effect of hydrogen peroxide (H2O2) on negative bias stress (NBS) stability of solution-processed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The instability of solution-processed a-IGZO TFTs under NBS is attributed to intrinsic oxygen vacancy defects (Vo) and organic chemical-induced defects, such as pores, pin holes, and organic residues. In this respect, we added H2O2 into an indium-gallium-zinc oxide solution to reduce the defects without any degradation of electrical performance. The field-effect mobility and sub-threshold slope of the a-IGZO TFTs were improved from 0.37 cm(2) V(-1) s(-1) and 0.86 V/dec to 0.97 cm(2) V(-1) s(-1) and 0.58 V/dec, respectively. Furthermore, the threshold voltage shift under NBS was dramatically decreased from -3.73 to -0.18 V. These results suggest that H2O2 effectively reduces Vo through strong oxidation and minimizes organic chemical-induced defects by eliminating the organic chemicals at lower temperatures compared to a conventional solution process.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Kwon</LastName><ForeName>Jeong Moo</ForeName><Initials>JM</Initials><Affiliation>School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Jung</LastName><ForeName>Joohye</ForeName><Initials>J</Initials></Author><Author ValidYN="Y"><LastName>Rim</LastName><ForeName>You Seung</ForeName><Initials>YS</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Dong Lim</ForeName><Initials>DL</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Hyun Jae</ForeName><Initials>HJ</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>02</Month><Day>24</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Appl Mater Interfaces</MedlineTA><NlmUniqueID>101504991</NlmUniqueID><ISSNLinking>1944-8244</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2014</Year><Month>2</Month><Day>24</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>2</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>2</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>2</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/am4054139</ArticleId><ArticleId IdType="pubmed">24503476</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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